rev. 1.4 7 th august 2009 ? mintech semiconducto rs ltd 1 www.mintech.co.uk symbol parameter package ratings units r jc maximum thermal resistance, junction to case to-276al 3.51 c/w r jc maximum thermal resistance, junction to case to-257aln 1.45 c/w r jc maximum thermal resistance, junction to case to-276ab 1.24 c/w ordering part # package temp range dut1505al to-257al -65 to 260c dut1505aln to-257aln -65 to 260c dut1505s to-276ab -65 to 260c DUT1505-AG bare die -65 to 260c dut1505-gg bare die -65 to 260c general description august 2009 high efficiency, temperature independent gaas rect ifier diode dut1505 ? 500v, 15a features the dut1505 is a gaas p-i-n rectifier. it uses a patented liquid phase epitaxy (lpe) construction to provide temperature performance above current silicon, silicon carbide and gallium nitride products of a similar specification. the device is able to function stably well above the maximum t j of more traditional diodes of this type while maintaining parity of performance in terms of key parameters such as recovery time and forward voltage. high maximum junction temperature; up to +260c vs. +175c for silicon diodes lower and temperature independent dynamic recovery characteristics over the full specified temperature range lower leakage current at all operating temperatures very low capacitance applications high temperature electronics power modules hybrid circuits package types to-276ab (smd) preliminary to-257 thermal characteristics bare die to-257al / to-257aln 1 cathode 2 anode 3 cathode to-276ab bare die (3.1mm2) 1 2 3 1 1. cathode 2. anode (die backside) 1 2 3 1. anode 2. common cathode 3. common cathode europe: sales@mintech.co.uk usa : ussales@mintech.co.uk china: chinasales@mintech.co.uk
rev. 1.4 7 th august 2009 ? mintech semiconducto rs ltd 2 www.mintech.co.uk symbol parameter ratings units v rrm peak repetetive reverse voltage 500 v v rwm working peak repetetive reverse voltage 500 v v r dc blocking voltage 500 v i f(av) average rectified forward current @ 260c 15 a i fsm non-repetetive peak surge current 60hz single half-sine wave 150 a t j ,t stg operating and storage temperature range -65 to +260 c symbol parameter min typ max units v fm 1 i f =15a t c = 25c t c = 175c t c = 260c - - - 1.8 2.1 2.3 1.9 2.2 2.5 v i rm 1 v r =500v t c = 25c t c = 175c t c = 260c - - - 0.40 125 1000 1 130 1100 a t rr i f =1a, di/dt = 200 a/s, v r =30v t c = 25c t c = 175c t c = 260c - - - 30 30 30 35 35 35 ns t rr i rr q rr i f =15a, di/dt = 200 a/s, v r =200v t c = 25c - - - 65 9 300 75 10 370 ns a nc t rr i rr q rr i f =15a, di/dt = 200 a/a, v r =200v t c = 175c - - - 65 9 300 75 10 370 ns a nc t rr i rr q rr i f =15a, di/dt = 200 a/a, v r =200v t c = 260c - - - 65 9 300 75 10 370 ns a nc c j t j = 25c, f = 1mhz, v r = 200v - - 18 22 pf w avl avalanche energy ( l=2mh ) - 10 - - mj absolute maximum ratings notes: 1: pulse: test pulse width = 300 s, duty cycle = 2% electrical characteristics
rev. 1.4 7 th august 2009 ? mintech semiconducto rs ltd 3 www.mintech.co.uk typical performance characteristics tba ? irr vs di/dt 25c 25c 175c 26 0c 26 0c 175c 25c
rev. 1.4 7 th august 2009 ? mintech semiconducto rs ltd 4 www.mintech.co.uk mechanical dimensions note: all dimensions in millimetres pins must not be bent less than 4.0mm from case finish ? electroless ni 3-5 m thick to-257 to-276ab(smd) note: all dimensions in millimeters [inches]
rev. 1.4 7 th august 2009 ? mintech semiconducto rs ltd 5 www.mintech.co.uk bare die mechanical dimensions 3.1mm 3.1mm cathode anode epitaxial p-i-n layer metalisation p+ substrate passivation cathode 3.1mm x 3.1mm dimensions top metal al or au (see order code below) back metal au thickness 400m 20m dut15 05 - ag al topside au backside du t15 05 - gg au topside au backside r = 0.3mm cathode 2.6mm 2.6mm note: for custom thicknesses please contact us pocket details x = 3.20mm 0.05mm pocket size y = 3.20mm 0.05mm pocket size z = 1.19mm 0.08mm pocket depth a = 5 1/2 pocket draft angle no cross slots array = 10 x 10 (100) overall tray size size = 50.80mm 0.10mm height = 3.96mm +0.05mm -0.08mm flatness = 0.10mm waffle pack dimensions note: for other supply formats please contact us x y a x z
rev. 1.4 7 th august 2009 ? mintech semiconducto rs ltd 6 www.mintech.co.uk disclaimer mintech semiconductors in partnership with clifton reserve the right to make changes without further notice to any products here in to improve reliability, function, or design. clifton as and mintech semiconductors do not assume any liability arising out of the application or use of any product or circuit described herein; neither do we convey any license under its patent rights, nor the rights of others. life support policy mintech semiconductors & clifton products are not a uthorized for use as critical components in life support devices or syst ems without the express written approval of mintech semiconductors and clif ton. as used herein: 1. life support devices or systems are devices or s ystems which, (a) are intended for surgical implant into t he body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expecte d to result in a significant injury to the user. 2. a critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the lif e support device or system, or to affect its safety or effect iveness.
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